Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73135 .
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
5
相关PDF资料
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SI3853DV-T1-GE3 MOSFET P-CH 20V 1.6A 6-TSOP
SI3867DV-T1-GE3 MOSFET P-CH 20V 3.9A 6-TSOP
SI3905DV-T1-GE3 MOSFET P-CH D-S 8V 6-TSOP
SI3909DV-T1-GE3 MOSFET 2P-CH 20V 6TSOP
SI3911DV-T1-GE3 MOSFET P-CH DUAL 20V 6TSOP
SI3981DV-T1-GE3 MOSFET P-CH DUAL 20V 6-TSOP
相关代理商/技术参数
SI3499DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.5-V (G-S) MOSFET
SI3499DV_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.5-V (G-S) MOSFET
SI3499DV-T1 功能描述:MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3499DV-T1-E3 功能描述:MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3499DV-T1-E3C 制造商:Vishay Siliconix 功能描述:
SI3499DV-T1-GE3 功能描述:MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3499DV-T1-GE3 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET -8V 7A TSOP
SI-35003-F 制造商:Bel Fuse 功能描述:- Trays